X-ray sensitivity of photoconductors : application to stabilized a-SeKASAP, S. O.Journal of physics. D, Applied physics (Print). 2000, Vol 33, Num 21, pp 2853-2865, issn 0022-3727Article

Charge-carrier deep-trapping kinetics in high-resistivity semiconductorsKASAP, S. O.Journal of physics. D, Applied physics (Print). 1992, Vol 25, Num 1, pp 83-93, issn 0022-3727Article

Transient photoconductivity measurements on halogenated a-Se_1-xTe_x photoconductorsKASAP, S. O.Canadian journal of physics (Print). 1989, Vol 67, Num 11, pp 1053-1064, issn 0008-4204Article

Dark decay of electrostatic surface potential on dielectrics via bulk space-charge buildupKASAP, S. O.Journal of electrostatics. 1989, Vol 22, Num 1, pp 69-90, issn 0304-3886, 22 p.Article

Inverted xerographic depletion discharge mechanism for the dark decay of electrostatic surface potential on amorphous semiconductorsKASAP, S. O.Journal of applied physics. 1988, Vol 64, Num 1, pp 450-452, issn 0021-8979Article

The demarcation energy concept in the analysis of charge carrier emission kinetics from deep mobility gap states in amorphous semiconductorsKASAP, S. O.Journal of physics. D, Applied physics (Print). 1988, Vol 21, Num 5, pp 841-844, issn 0022-3727Article

Effect of aging on glass transformation measurements by temperature modulated DSCTONCHEV, D; KASAP, S. O.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2002, Vol 328, Num 1-2, pp 62-66, issn 0921-5093Article

Glass transformation, heat capacity and structure of As_xSe_1-x glasses studied by modulated temperature differential scanning calorimetry experimentsWAGNER, T; KASAP, S. O.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1996, Vol 74, Num 6, pp 667-680, issn 1364-2812Article

Thermomicrohardness analysis (TμHA) of glassy materialsYANNACOPOULOS, S; KASAP, S. O.Theoretical and applied fracture mechanics. 1990, Vol 13, Num 1, pp 53-58, issn 0167-8442Article

Mechanical and thermal properties of the glassy semiconductor chlorinated Se_0.997As_..0003 used as an X-ray imaging materialKASAP, S. O; YANNACOPOULOS, S.Canadian journal of physics (Print). 1989, Vol 67, Num 7, pp 686-693, issn 0008-4204Article

A high-voltage interrupted-field time-of-flight transient photoconductivity apparatusPOLISCHUK, B; KASAP, S. O.Measurement science & technology (Print). 1991, Vol 2, Num 1, pp 75-80, issn 0957-0233Article

Theory of thermal analysis of non-isothermal crystallization kinetics of amorphous solidsKASAP, S. O; JUHASZ, C.Journal of the Chemical Society. Faraday Transactions II. 1985, Vol 81, Num 6, pp 811-831, issn 0300-9238Article

Thermal and mechanical properties of single- and double-layer amorphous Se_1-xTe_x photoreceptorsKASAP, S. O; JUHASZ, C.Journal of materials science letters. 1987, Vol 6, Num 4, pp 397-400, issn 0261-8028Article

Charge transport in chlorine doped amorphous Se:Te xerographic photoreceptor filmsKASAP, S. O; JUHASZ, C.Journal of non-crystalline solids. 1985, Vol 72, Num 1, pp 23-37, issn 0022-3093Article

1/f conductance noise in n-type amorphous siliconJOHANSON, R. E; SCANSEN, D; KASAP, S. O et al.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1996, Vol 73, Num 4, pp 707-714, issn 1364-2812Article

Heat capacity and the structure of chalcogenide glasses by modulated differential scanning calorimetry (MDSC)KASAP, S. O; WAGNER, T; MAEDA, K et al.Japanese journal of applied physics. 1996, Vol 35, Num 9A, pp L1116-L1119, issn 0021-4922, 2Article

Study of photogenerated charge carrier dispersion in chlorinated a-Se:0.3%As by the interrupted field time-of-flight techniquePOLISCHUK, B; KASAP, S. O; BAILLIE, A et al.Applied physics letters. 1993, Vol 63, Num 2, pp 183-185, issn 0003-6951Article

Amorphous selenium as an X-ray photoconductorBELEV, G; KASAP, S. O.Journal of non-crystalline solids. 2004, Vol 345-46, pp 484-488, issn 0022-3093, 5 p.Conference Paper

Temperature-modulated differential scanning calorimetry studies of the structure of bulk and film Ge_xAs_yS₆₀ chalcogenide glassesWAGNER, T; KASAP, S. O; PETKOV, K et al.Journal of materials science. 1997, Vol 32, Num 22, pp 5889-5893, issn 0022-2461Article

Excess noise, gain, and dark current in Ge avalanche photodiodesSCANSEN, D; KASAP, S. O.Canadian journal of physics (Print). 1992, Vol 70, Num 10-11, pp 1070-1075, issn 0008-4204Conference Paper

Thermal and mechanical properties of amorphous selenium films in the glass transformation regionKASAP, S. O; VISWANATH AIYAH; YANNACOPOULOS, S et al.Journal of physics. D, Applied physics (Print). 1990, Vol 23, Num 5, pp 553-561, issn 0022-3727Article

Comparison of excess 1/f noise spectra in trimmed and untrimmed thick film resistorsPELED, A; ZLOOF, Y; KASAP, S. O et al.International journal of electronics. 2000, Vol 87, Num 1, pp 1-9, issn 0020-7217Article

Modelling of photoinduced discharge of photoreceptors under pulsed photoexcitation : small and large signal xerographic time-of-flight analysisKASAP, S. O; BRINKHURST, D; HAUGEN, C et al.Journal of physics. D, Applied physics (Print). 2000, Vol 33, Num 4, pp 449-463, issn 0022-3727Article

The origin of anomalous optical conductivity in metallic polymers: A unified modelSHIMAKAWA, K; NAITO, H; KASAP, S. O et al.Philosophical magazine letters. 2009, Vol 89, Num 11, pp 673-681, issn 0950-0839, 9 p.Article

1/f noise in hydrogenated amorphous silicon-germanium alloysJOHANSON, R. E; GÜNES, M; KASAP, S. O et al.IEE proceedings. Circuits, devices and systems. 2003, Vol 150, Num 4, pp 345-349, issn 1350-2409, 5 p.Article